Welcome to HPSynC
A Gateway for High-Pressure Scientists to Beamlines of the APS

Diamond anvil cell behavior up to 4 Mbar
Diamond anvil cell behavior up to 4 Mbar
Since its invention, the diamond anvil cell (DAC) has been one of the most essential tools used to simulate ultrahigh pressure conditions in multidisciplinary research fields. Recently, a research team led by Dr. Ho-kwang Mao conducted in situ high-pressure synchrotron X-ray diffraction and absorption measurements to study the loading behaviors of the beveled DAC by using the submicrometer synchrotron X-ray beam at the Advanced Photon Source (APS) at Argonne National Laboratory (ANL). The investigation presented a comprehensive understanding of variables that affect the achievement of ultrahigh pressures. This study established a solid foundation for future development of DAC techniques.More...

Syntheses, structure and properties of a new Fillowite-type compound Na0.48Mn1.22PO4
Syntheses, structure and properties of a new Fillowite-type compound Na0.48Mn1.22PO4
Scientists recently synthesized a new Fillowite-type NMPO compound, Na0.48 Mn1.22PO4, by using solid-state reaction. Within the new NMPO system, Mn binds O as a 3D Mn-O-Mn network with the insertion of some Mn5O6. The valence of Mn was confirmed in HPSynC by using the facilities at APS at Argonne National Lab. Further electrochemical tests indicated that the new NMPO compound has great potential in Na-ion battery applications, a low cost and environmental friendly energy storage alternative to Li-ion batteries.More...

High-Pressure Band-Gap Engineering in Lead-Free Cs2AgBiBr6 Double Perovskite
High-Pressure Band-Gap Engineering in Lead-Free Cs2AgBiBr6 Double Perovskite
Researchers have been considering Cs2AgBiBr6 as a good candidate material for photovoltaic applications because of its unique optical and electronic properties, structure stability and lead-toxic free feature. However, the relatively large band gap of 2.2eV has been a big hurdle for the development of Cs2AgBiBr6 based optoelectronic devices. Recently, for the first time, a group of scientists successfully narrowed the band gap of this material from 2.2eV to 1.7eV, a 22.3% reduction, by applying high pressure. Moreover, the band gap reduction partially sustained after the pressure was released to ambient condition. This study demonstrates that high pressure can play an important role in engineering the band gap of functional semiconductors.More...

Oxygen-Rich Lithium Oxide Phases Formed at High Pressure for Potential Lithium–Air Battery Electrode
Oxygen-Rich Lithium Oxide Phases Formed at High Pressure for Potential Lithium–Air Battery Electrode
By using high pressure synchrotron technics, a group of scientists from HPSTAR, Geo Lab at Carnegie Institution of Science and Argonne National Laboratory investigated the stability of lithium oxides and discovered three stable high-pressure phases of oxygen-rich lithium oxides under high pressure and temperature: LiO2 (P4/mbm), Li2O3 (Im-3m) and LiO4 (lbam). The researchers further explored the cause of these new stable high-pressure phases and their corresponding structures. This study rolled out a new platform for battery designs and applications under extreme conditions.More...

Synthesis of quenchable amorphous diamond
Synthesis of quenchable amorphous diamond
Although it has been long expected that purely sp3-bonded tetrahedral amorphous carbon materials have broad prospects in industrial applications due to their unique properties, such as ultra-high hardness, extremely low friction and outstanding wear resistance, scientists had never observed or achieved complete sp3 bonding amorphous carbon under ambient conditions. Recently, for the first time, a collaboration team has successfully turned mostly sp2 bonded glassy carbon to purely sp3 bonded "amorphous diamond" by using HPHT and DAC technics. The sp2-to-sp3 transformation is irreversible when temperature and pressure fall back to ambient conditions.More...

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